| PART |
Description |
Maker |
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M12L16161A M12L16161A-4.3T M12L16161A-5.5T M12L161 |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
ETC
|
| M12S16161A07 M12S16161A-7BG M12S16161A-7TG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12L16161A-5TG M12L16161A-7BG M12L16161A-7TG M12L1 |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| R1LV0816ASB-5SI R1LV0816ASB-7SI |
8Mb Advanced LPSRAM (512k word x 16bit)
|
Renesas Electronics Corporation
|
| R1LV0816ABG-5SI |
8Mb Advanced LPSRAM (512k word x 16bit)
|
Renesas Electronics Corporation
|
| M52S16161A-10TG M52S16161A-8BG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
|
Elite Semiconductor Memory Technology, Inc.
|
| IC43R16800 |
2M x 16bit x 4 Banks DDR SDRAM
|
Integrated Circuit Solution
|
| K4M51163PC-X |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| K4S51153LF K4S51163LF-YPC_L_F1H K4S51163LF-YPC_L_F |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
